N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 22A Continuous Drain Current, and 360mR Rds On Max. This silicon Metal-oxide Semiconductor FET features a TO-220AB plastic package for through-hole mounting. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 500W. Key switching characteristics include a 28ns turn-on delay, 19ns fall time, and 54ns turn-off delay, with an input capacitance of 2.6nF.
Sign in to ask questions about the Ixys IXFP22N60P3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXFP22N60P3 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16mm |
| Input Capacitance | 2.6nF |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 28ns |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFP22N60P3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
