N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 22A Continuous Drain Current, and 360mR Rds On Max. This silicon Metal-oxide Semiconductor FET features a TO-220AB plastic package for through-hole mounting. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 500W. Key switching characteristics include a 28ns turn-on delay, 19ns fall time, and 54ns turn-off delay, with an input capacitance of 2.6nF.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFP22N60P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16mm |
| Input Capacitance | 2.6nF |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 28ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP22N60P3 Datasheet
Download the complete datasheet for Ixys IXFP22N60P3 to view detailed technical specifications.
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