N-Channel Power MOSFET, TO-220 package, featuring 1200V drain-source breakdown voltage and 3A continuous drain current. Offers a low 4.5 ohm drain-source on-resistance and 200W maximum power dissipation. Designed for through-hole mounting with a threshold voltage of 5V and a gate-source voltage rating of 20V. Includes fast switching characteristics with an 18ns fall time and 32ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power200W
Quick Jump:
Technical Specifications
Ixys IXFP3N120 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 4.5R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 4.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP3N120 Datasheet
Download the complete datasheet for Ixys IXFP3N120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
