The IXFP3N50PM is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 2.7A. It has a drain to source resistance of 2 ohms and a maximum power dissipation of 36W. The device is packaged in a TO-220AB flange mount package and is designed for through hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 409pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 63ns |
| RoHS | Compliant |
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