Ixys
IXFP3N50PM
Power Field-Effect Transistor, 2.7A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power36W
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Technical Specifications
Ixys IXFP3N50PM technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
500V
Fall Time
29ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
409pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
36W
Rds On Max
2R
RoHS Compliant
Yes
Series
HiPerFET™, PolarHT™
Turn-Off Delay Time
63ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP3N50PM Datasheet
Download the complete datasheet for Ixys IXFP3N50PM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.