N-channel silicon MOSFET featuring 1000V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 3-ohm drain-source on-resistance and a maximum power dissipation of 150W. Operating across a wide temperature range from -55°C to 150°C, it includes a 5V threshold voltage and fast switching characteristics with an 18ns fall time and 32ns turn-off delay. Packaged in a TO-220AB plastic case, this RoHS compliant device is suitable for demanding power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Ixys IXFP4N100Q technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
3R
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.05nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
5V
Turn-Off Delay Time
32ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP4N100Q Datasheet
Download the complete datasheet for Ixys IXFP4N100Q to view detailed technical specifications.
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