N-channel silicon MOSFET featuring 1000V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 3-ohm drain-source on-resistance and a maximum power dissipation of 150W. Operating across a wide temperature range from -55°C to 150°C, it includes a 5V threshold voltage and fast switching characteristics with an 18ns fall time and 32ns turn-off delay. Packaged in a TO-220AB plastic case, this RoHS compliant device is suitable for demanding power applications.
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| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 32ns |
| RoHS | Compliant |
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