The IXFP4N60P3 is a high-power MOSFET from Ixys, featuring a TO-220AB package and through-hole mounting. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 114W. The device has a continuous drain current of 4A and a drain-to-source voltage of 600V. It also has a low on-resistance of 2.2R and fast switching times of 15ns and 24ns.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXFP4N60P3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16mm |
| Input Capacitance | 365pF |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 15ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP4N60P3 Datasheet
Download the complete datasheet for Ixys IXFP4N60P3 to view detailed technical specifications.
No datasheet is available for this part.