The IXFP5N100P is a TO-220 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 5A and a drain to source breakdown voltage of 1kV. The device is lead free and RoHS compliant, with a maximum power dissipation of 250W. It is suitable for use in high-power applications where a high level of reliability is required.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Ixys IXFP5N100P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.83nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 2.8R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP5N100P Datasheet
Download the complete datasheet for Ixys IXFP5N100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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