Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFP6N120P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Input Capacitance | 2.83nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 2.4R |
| RoHS Compliant | Yes |
| Series | Polar™ HiPerFET™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFP6N120P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
