N-channel power MOSFET with 800V drain-source breakdown voltage and 7A continuous drain current. Features 1.44 ohm Rds(on) and 200W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-220 package for through-hole mounting. Operates from -55°C to 150°C and offers fast switching speeds with a 28ns turn-on delay and 24ns fall time. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFP7N80P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.89nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 1.44R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 28ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP7N80P Datasheet
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