N-channel power MOSFET with 800V drain-source breakdown voltage and 7A continuous drain current. Features 1.44 ohm Rds(on) and 200W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-220 package for through-hole mounting. Operates from -55°C to 150°C and offers fast switching speeds with a 28ns turn-on delay and 24ns fall time. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFP7N80P technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
800V
Fall Time
24ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
1.89nF
Lead Free
Lead Free
Length
10.66mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Rds On Max
1.44R
RoHS Compliant
Yes
Series
HiPerFET™, PolarHT™
Turn-Off Delay Time
55ns
Turn-On Delay Time
28ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP7N80P Datasheet
Download the complete datasheet for Ixys IXFP7N80P to view detailed technical specifications.
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