
N-channel power MOSFET with 800V drain-source breakdown voltage and 7A continuous drain current. Features 1.44 ohm Rds(on) and 200W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-220 package for through-hole mounting. Operates from -55°C to 150°C and offers fast switching speeds with a 28ns turn-on delay and 24ns fall time. RoHS compliant and lead-free.
Ixys IXFP7N80P technical specifications.
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