Ixys
IXFP7N80PM
Power Field-Effect Transistor, 3.5A I(D), 800V, 1.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Ixys IXFP7N80PM technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
800V
Input Capacitance
1.89nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
1.44R
RoHS Compliant
Yes
Series
HiPerFET™, PolarHT™
Turn-Off Delay Time
55ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP7N80PM Datasheet
Download the complete datasheet for Ixys IXFP7N80PM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.