N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 4.4A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers 800mΩ drain-to-source resistance and a maximum power dissipation of 42W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and a 23ns fall time.
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| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.05nF |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 22ns |
| Width | 4.83mm |
| RoHS | Compliant |
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