IXYS

IXFP8N50PM

Datasheet

500V 4.4A N-CH MOSFET, 800mR Rds On, TO-220

Ixys

IXFP8N50PM

Name: IXFP8N50PM Ixys
Brand: Ixys
SKU: IXFP8N50PM

500V 4.4A N-CH MOSFET, 800mR Rds On, TO-220

N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 4.4A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers 800mΩ drain-to-source resistance and a maximum power dissipation of 42W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and a 23ns fall time.

PackageTO-220

MountingThrough Hole

PolarityN-CHANNEL

Power42W

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Technical Specifications

Ixys IXFP8N50PM technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	4.4A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	800mR
Drain to Source Voltage (Vdss)	500V
Fall Time	23ns
Gate to Source Voltage (Vgs)	30V
Height	9.15mm
Input Capacitance	1.05nF
Length	10.66mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	42W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	42W
Rds On Max	800mR
RoHS Compliant	Yes
Series	HiPerFET™, PolarHT™
Turn-Off Delay Time	65ns
Turn-On Delay Time	22ns
Width	4.83mm