IXFP8N50PM

N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 4.4A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers 800mΩ drain-to-source resistance and a maximum power dissipation of 42W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and a 23ns fall time.