Ixys
IXFQ22N60P3
Power Field-Effect Transistor, 22A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFQ22N60P3 technical specifications.
General
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
360mR
Drain to Source Voltage (Vdss)
600V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
20.3mm
Input Capacitance
2.6nF
Length
15.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Rds On Max
360mR
RoHS Compliant
Yes
Series
HiPerFET™, Polar3™
Turn-Off Delay Time
54ns
Turn-On Delay Time
28ns
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFQ22N60P3 Datasheet
Download the complete datasheet for Ixys IXFQ22N60P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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