N-channel Silicon Metal-oxide Semiconductor FET, designed for high-power applications. Features a 600V drain-to-source breakdown voltage and a continuous drain current capability of 50A. Offers a low drain-to-source resistance of 145mΩ at a gate-to-source voltage of 30V. This through-hole mounted component boasts a maximum power dissipation of 1.04kW and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a fall time of 17ns and turn-off delay of 62ns.
MountingThrough Hole
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFQ50N60P3 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 6.3nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 145mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 31ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFQ50N60P3 Datasheet
Download the complete datasheet for Ixys IXFQ50N60P3 to view detailed technical specifications.
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