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Technical Specifications
Ixys IXFQ60N50P3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 6.25nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 18ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFQ60N50P3 Datasheet
Download the complete datasheet for Ixys IXFQ60N50P3 to view detailed technical specifications.
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