The IXFR10N100Q is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 250W and a drain to source breakdown voltage of 1kV. The device is packaged in a 3-pin ISOPLUS247 package and is available in quantities of 30. It is RoHS compliant and suitable for use in high-power applications.
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| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
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