N-Channel Power MOSFET featuring 300V drain-to-source breakdown voltage and 82A continuous drain current. Offers a low 26mΩ drain-to-source resistance for efficient power handling. Designed with a 300W maximum power dissipation and a 3-pin ISOPLUS247 plastic package for through-hole mounting. Includes a 5V threshold voltage and 20V gate-to-source voltage rating.
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Ixys IXFR140N30P technical specifications.
General
| Continuous Drain Current (ID) | 82A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14.8nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR140N30P Datasheet
Download the complete datasheet for Ixys IXFR140N30P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
