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Technical Specifications
Ixys IXFR14N100Q2 technical specifications.
General
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR14N100Q2 Datasheet
Download the complete datasheet for Ixys IXFR14N100Q2 to view detailed technical specifications.
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