The IXFR18N90P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 900V and a continuous drain current of 10.5A. The device is packaged in a 3-pin ISOPLUS247 plastic package and is RoHS compliant. It is suitable for high-power applications where a high drain to source resistance of 660mR is required.
MountingThrough Hole
PolarityN-CHANNEL
Power200W
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Technical Specifications
Ixys IXFR18N90P technical specifications.
General
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 900V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR18N90P Datasheet
Download the complete datasheet for Ixys IXFR18N90P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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