IXFR36N60P

N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers low 200mΩ drain-source resistance (Rds On Max) and 208W maximum power dissipation. Designed for through-hole mounting with a 3-pin ISOPLUS247 package. Key specifications include 5.8nF input capacitance, 30V gate-source voltage, and fast switching times with a 22ns fall time. RoHS compliant and operates across a wide temperature range from -55°C to 150°C.