N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers low 200mΩ drain-source resistance (Rds On Max) and 208W maximum power dissipation. Designed for through-hole mounting with a 3-pin ISOPLUS247 package. Key specifications include 5.8nF input capacitance, 30V gate-source voltage, and fast switching times with a 22ns fall time. RoHS compliant and operates across a wide temperature range from -55°C to 150°C.
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| Continuous Drain Current (ID) | 20A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.8nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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