The IXFR48N60P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 150mR. The device is RoHS compliant and lead free, packaged in a rail/tube configuration with 30 units per package. It is suitable for high-power applications due to its maximum power dissipation of 300W.
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Ixys IXFR48N60P technical specifications.
| Continuous Drain Current (ID) | 32A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.86nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFR48N60P to view detailed technical specifications.
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