The IXFR58N20 is a high-power transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 200V and a maximum power dissipation of 300W. The device features a continuous drain current of 50A and a maximum Rds on resistance of 40mΩ. It is packaged in a rail/through hole configuration for easy mounting.
MountingThrough Hole
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Technical Specifications
Ixys IXFR58N20 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 3.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 40mR |
| Series | HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR58N20 Datasheet
Download the complete datasheet for Ixys IXFR58N20 to view detailed technical specifications.
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