N-Channel Power MOSFET, 600V Drain to Source Voltage, 36A Continuous Drain Current, and 105mR Drain to Source Resistance. Features a 64A current rating and 320W maximum power dissipation. This silicon Metal-oxide Semiconductor FET offers fast switching with a 24ns fall time, 28ns turn-on delay, and 79ns turn-off delay. Designed for through-hole mounting with a 3-pin ISOPLUS247 package, it operates from -55°C to 150°C and is RoHS compliant.
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFR64N60P technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 320W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 600V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR64N60P Datasheet
Download the complete datasheet for Ixys IXFR64N60P to view detailed technical specifications.
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