
The IXFR64N60Q3 is a N-CHANNEL power MOSFET from Ixys, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 568W and a maximum drain to source breakdown voltage of 600V. The device is packaged in a TO-247-3 package and is mounted through a hole. It is RoHS compliant and part of the HiPerFET series.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 104mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 9.93nF |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 568W |
| Rds On Max | 104mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 45ns |
| Width | 5.21mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFR64N60Q3 to view detailed technical specifications.
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