N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 45A continuous drain current. Offers low 72mΩ drain-source on-resistance and 360W maximum power dissipation. Designed for through-hole mounting with a 3-pin ISOPLUS247 package. Includes a 5V threshold voltage and 16ns fall time.
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Ixys IXFR80N50P technical specifications.
| Continuous Drain Current (ID) | 45A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 72MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12.7nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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