N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 50A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 72mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, it supports a maximum power dissipation of 570W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 10nF input capacitance and turn-on/off delay times of 30ns and 43ns respectively.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power570W
Quick Jump:
Technical Specifications
Ixys IXFR80N50Q3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 72MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 10nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 570W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 570W |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 30ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR80N50Q3 Datasheet
Download the complete datasheet for Ixys IXFR80N50Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
