Ixys
IXFT10N100
Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFT10N100 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT10N100 Datasheet
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