The IXFT15N80Q is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 15A and a drain to source breakdown voltage of 800V. The device features a drain to source resistance of 600mR and a maximum power dissipation of 300W. It is packaged in a TO-268 case and is suitable for surface mount applications.
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Ixys IXFT15N80Q technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 53ns |
| RoHS | Compliant |
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