The IXFT16N80P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 16A. The device has a maximum power dissipation of 460W and is packaged in a TO-268 surface mount package. The IXFT16N80P is RoHS compliant and suitable for high-power applications.
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Ixys IXFT16N80P technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 75ns |
| RoHS | Compliant |
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