The IXFT18N90P is a high-power N-channel MOSFET from Ixys with a maximum drain-to-source breakdown voltage of 900V and a continuous drain current of 18A. It features a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 540W. The device is packaged in a TO-268 plastic package and is designed for surface mount applications. The IXFT18N90P is RoHS compliant and is part of the HiPerFET and PolarP2 series.
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 900V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFT18N90P to view detailed technical specifications.
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