The IXFT26N50Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 26A. The device has a maximum power dissipation of 300W and is packaged in a TO-268 surface mount package. The IXFT26N50Q is lead-free and RoHS compliant, making it suitable for use in a variety of applications.
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 55ns |
| RoHS | Compliant |
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