Power Field-Effect Transistor, 340A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 935W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™, HiperFET™, TrenchT2™ |
| RoHS | Compliant |
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