N-Channel Power MOSFET, 500V Drain-Source Voltage, 36A Continuous Drain Current, and 170mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-268 package, suitable for surface mounting. Key specifications include a 540W maximum power dissipation, 5.5nF input capacitance, and a 5V threshold voltage. It operates within a temperature range of -55°C to 150°C and offers fast switching with a 21ns fall time and 75ns turn-off delay. RoHS compliant and lead-free.
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Ixys IXFT36N50P technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 170mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Polar™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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