N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 36A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 190mΩ Rds On resistance. Designed for surface mounting in a TO-268 package, it operates from -55°C to 150°C with a maximum power dissipation of 650W. Key electrical characteristics include a 5.8nF input capacitance and a 5V threshold voltage.
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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