Power Field-Effect Transistor, 50A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.1mm |
| Input Capacitance | 6.3nF |
| Length | 16.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 145mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 31ns |
| Width | 14mm |
| RoHS | Compliant |
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