IXFT60N20F

Name: IXFT60N20F Ixys
Brand: Ixys
SKU: IXFT60N20F

Power Field-Effect Transistor, 60A I(D), 200V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

PackageTO-268

PolarityN-CHANNEL

Power315W

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Ixys IXFT60N20F technical specifications.

Package/Case	TO-268
Continuous Drain Current (ID)	60A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	38mR
Fall Time	7ns
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	315W
RoHS Compliant	Yes
Turn-Off Delay Time	42ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.