N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 60A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 100mΩ drain-source resistance. Designed for surface mounting in a TO-268 package, it boasts a maximum power dissipation of 1.04kW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns fall time, 18ns turn-on delay, and 37ns turn-off delay.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFT60N50P3 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.1mm |
| Input Capacitance | 6.25nF |
| Lead Free | Lead Free |
| Length | 16.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 18ns |
| Width | 14mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT60N50P3 Datasheet
Download the complete datasheet for Ixys IXFT60N50P3 to view detailed technical specifications.
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