The IXFT70N30Q3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 70A and a drain to source breakdown voltage of 300V. The device has a maximum power dissipation of 830W and is packaged in a TO-268, 3 PIN package. The IXFT70N30Q3 is RoHS compliant and suitable for surface mount applications.
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| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | 300V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.1mm |
| Input Capacitance | 4.735nF |
| Length | 16.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 54mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 33ns |
| Width | 14mm |
| RoHS | Compliant |
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