Ixys
IXFT70N30Q3
Power Field-Effect Transistor, 70A I(D), 300V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXFT70N30Q3 technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
54mR
Drain to Source Voltage (Vdss)
300V
Gate to Source Voltage (Vgs)
30V
Height
5.1mm
Input Capacitance
4.735nF
Length
16.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830W
Mount
Surface Mount
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
830W
Rds On Max
54mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
38ns
Turn-On Delay Time
33ns
Width
14mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT70N30Q3 Datasheet
Download the complete datasheet for Ixys IXFT70N30Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.