Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXFT80N10Q datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXFT80N10Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 68ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT80N10Q Datasheet
Download the complete datasheet for Ixys IXFT80N10Q to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.