The IXFV110N10P is an N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 110A. The device has a maximum power dissipation of 480W and a drain to source resistance of 15mR. It is packaged in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power480W
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Technical Specifications
Ixys IXFV110N10P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.55nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 480W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV110N10P Datasheet
Download the complete datasheet for Ixys IXFV110N10P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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