The IXFV110N10PS is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 110A and a drain to source breakdown voltage of 100V. The device is packaged in a small outline R-PSSO-G2 package and is RoHS compliant. It is suitable for high-power applications such as power supplies and motor drives.
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Ixys IXFV110N10PS technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.55nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 480W |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| RoHS | Compliant |
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