Power Field-Effect Transistor, 16A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN
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Ixys IXFV16N80PS technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| RoHS | Compliant |
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