The IXFV30N60P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 240mR. The device is packaged in a TO-220-3 package and is lead free and RoHS compliant. It has a maximum power dissipation of 500W and a continuous drain current of 30A.
PackageTO-220-3
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFV30N60P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV30N60P Datasheet
Download the complete datasheet for Ixys IXFV30N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
