The IXFX24N100F is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 24A and a drain to source breakdown voltage of 1kV. The device has a maximum power dissipation of 560W and a gate to source voltage of 20V. It is packaged in a TO-247-3 case and is RoHS compliant.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Turn-Off Delay Time | 52ns |
| RoHS | Compliant |
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