Power Field-Effect Transistor, 320A I(D), 170V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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Ixys IXFX320N17T2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 320A |
| Drain to Source Voltage (Vdss) | 170V |
| Fall Time | 230ns |
| Input Capacitance | 45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67kW |
| Mount | Through Hole |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Output Current | 320A |
| Output Voltage | 170V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 46ns |
| RoHS | Compliant |
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