The IXFX32N80P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 32A. The device has a maximum power dissipation of 830W and a gate to source voltage of 30V. It is packaged in a TO-247-3 package and is RoHS compliant.
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Ixys IXFX32N80P technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
| RoHS | Compliant |
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