N-channel Silicon Metal-oxide Semiconductor FET, 800V drain-to-source breakdown voltage, 32A continuous drain current, and 270mΩ drain-to-source resistance. This single-element power field-effect transistor features a maximum power dissipation of 1kW and operates within a temperature range of -55°C to 150°C. Designed for through-hole mounting in a TO-247-3 plastic package, it includes a 30V gate-to-source voltage rating and a turn-on delay time of 38ns. RoHS compliant and lead-free.
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Ixys IXFX32N80Q3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 6.94nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 38ns |
| Width | 5.21mm |
| RoHS | Compliant |
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