IXFX32N80Q3

N-channel Silicon Metal-oxide Semiconductor FET, 800V drain-to-source breakdown voltage, 32A continuous drain current, and 270mΩ drain-to-source resistance. This single-element power field-effect transistor features a maximum power dissipation of 1kW and operates within a temperature range of -55°C to 150°C. Designed for through-hole mounting in a TO-247-3 plastic package, it includes a 30V gate-to-source voltage rating and a turn-on delay time of 38ns. RoHS compliant and lead-free.