Ixys
IXFX360N10T
Power Field-Effect Transistor, 360A I(D), 100V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFX360N10T technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
360A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
33nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25kW
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
2.9mR
RoHS Compliant
Yes
Series
GigaMOS™ HiPerFET™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX360N10T Datasheet
Download the complete datasheet for Ixys IXFX360N10T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.