N-Channel Power MOSFET, 150V Drain-Source Voltage, 360A Continuous Drain Current, and 4mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a 1.67kW maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. Designed for through-hole mounting in a TO-247-3 package, it offers fast switching characteristics with a 50ns turn-on delay and 115ns turn-off delay. RoHS compliant and lead-free.
PackageTO-247-3
Current100A
MountingThrough Hole
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Technical Specifications
Ixys IXFX360N15T2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 360A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 265ns |
| Input Capacitance | 47.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67kW |
| Mount | Through Hole |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Output Current | 360A |
| Output Voltage | 150V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX360N15T2 Datasheet
Download the complete datasheet for Ixys IXFX360N15T2 to view detailed technical specifications.
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