N-Channel Power MOSFET, 150V Drain-Source Voltage, 360A Continuous Drain Current, and 4mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a 1.67kW maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. Designed for through-hole mounting in a TO-247-3 package, it offers fast switching characteristics with a 50ns turn-on delay and 115ns turn-off delay. RoHS compliant and lead-free.
PackageTO-247-3
Current100A
MountingThrough Hole
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Technical Specifications
Ixys IXFX360N15T2 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
360A
Drain to Source Voltage (Vdss)
150V
Fall Time
265ns
Input Capacitance
47.5nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.67kW
Mount
Through Hole
Number of Drivers
1
Number of Outputs
1
Output Current
360A
Output Voltage
150V
Package Quantity
30
Packaging
Rail/Tube
Rds On Max
4mR
RoHS Compliant
Yes
Series
GigaMOS™
Supply Current
100A
Turn-Off Delay Time
115ns
Turn-On Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX360N15T2 Datasheet
Download the complete datasheet for Ixys IXFX360N15T2 to view detailed technical specifications.
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