N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 44A Continuous Drain Current. Features 130mΩ Drain to Source Resistance (Rds On Max) and 560W Maximum Power Dissipation. This through-hole component utilizes a TO-247-3 package and offers a 40ns fall time and 100ns turn-off delay time. Operates from -55°C to 150°C, with 8.9nF input capacitance and 20V gate-to-source voltage rating. RoHS compliant and lead-free.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 44A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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