N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and a maximum continuous drain current of 48A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 135mΩ. Designed for through-hole mounting in a TO-247-3 package, it supports a maximum power dissipation of 830W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 22ns and a turn-off delay time of 85ns.
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Ixys IXFX48N60P technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 135MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.86nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 135mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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