Power Field-Effect Transistor, 55A I(D), 500V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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Ixys IXFX55N50F technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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