Ixys
IXFX55N50F
Power Field-Effect Transistor, 55A I(D), 500V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
PackageTO-247-3
Current Rating55A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFX55N50F technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
55A
Current Rating
55A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
500V
Fall Time
9.6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.7nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
560W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
560W
Rds On Max
85mR
RoHS Compliant
Yes
Series
HiPerRF™
Turn-Off Delay Time
45ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX55N50F Datasheet
Download the complete datasheet for Ixys IXFX55N50F to view detailed technical specifications.
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